PBSS4140U,135 datasheet

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• Маркировка
  PBSS4140U,135
• Производитель
  Philips Semiconductors
• Описание
  Philips Semiconductors PBSS4140U,135 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 40 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 150 MHz DC Collector/Base Gain hfe Min: 300 at 1 mA at 5 V, 300 at 500 mA at 5 V, 200 at 1 A at 5 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: UMT DC Current Gain hFE Max: 300 at 1 mA at 5 V Maximum Power Dissipation: 350 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 10000 Part # Aliases: /T3 PBSS4140U
• Количество страниц
  8 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  73,96 KB

PBSS4140U,135 datasheet скачать

PBSS4140U,135 datasheet